Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)

We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I–V characteristics of theCNT MOSFET and conventional MOSFET structures. Results from numericalsimulation show that the maximum temperature rise and the performance degradation ofthe CNT MOSFET are quite lower than that of the conventional MOSFET counterpart.These advantages are contributed by the good electrical and thermal properties of theSWCNTs. Therefore, SWCNT materials have a high capability for the development ofactive devices with low power dissipation and good reliability at high operatingtemperature.